What Are the Solutions to Mitigate Gate Oxide Leakage?
Several strategies are employed to mitigate gate oxide leakage in nanotechnology:
High-κ Dielectrics: Materials with a high dielectric constant (κ) such as hafnium oxide (HfO2) can replace SiO2 to provide better insulation with a thicker physical layer, reducing leakage. Low-κ Materials: In some cases, using low-κ materials can help reduce overall capacitance, indirectly reducing leakage currents. Advanced Fabrication Techniques: Improved fabrication methods like atomic layer deposition (ALD) can create more uniform and defect-free oxide layers, minimizing leakage.
