Research is ongoing to find new materials and techniques to combat gate oxide leakage. Some promising areas include:
2D Materials: Materials like graphene and transition metal dichalcogenides (TMDs) offer excellent electrical properties and could serve as potential gate materials. Ferroelectric Materials: These materials exhibit a spontaneous electrical polarization, which could be used to create more robust gate oxides. Neuromorphic Computing: Leveraging leakage currents in a controlled manner could be beneficial for neuromorphic computing applications, which mimic the human brain's neural networks.
