Gate oxide leakage is a critical issue in nano-scale electronic devices for several reasons:
Power Consumption: Increased leakage currents lead to higher static power consumption, which is a major concern for battery-operated devices. Thermal Management: Leakage currents generate heat, making thermal management more challenging. Device Reliability: The integrity of the gate oxide layer is crucial for device reliability. High leakage currents can lead to premature device failure.
