PA-ALD offers several advantages over conventional ALD, including:
Lower Temperature Processing: The use of plasma allows for lower deposition temperatures, making it suitable for temperature-sensitive substrates. Improved Film Quality: The reactive species generated by plasma lead to better film uniformity and fewer defects. Enhanced Material Selection: PA-ALD expands the range of materials that can be deposited, including metals, oxides, and nitrides. Faster Deposition Rates: Plasma can accelerate the chemical reactions, resulting in quicker deposition cycles.
