How does PA-ALD work?
PA-ALD involves alternating exposure of the substrate to a precursor gas and a plasma source. The process consists of two main steps: adsorption and activation. During the adsorption step, the precursor gas adsorbs onto the substrate surface. In the activation step, plasma is used to create reactive species that facilitate the chemical reaction, forming a thin film. This cycle is repeated until the desired film thickness is achieved.
Lower Temperature Processing: The use of plasma allows for lower deposition temperatures, making it suitable for temperature-sensitive substrates.
Improved Film Quality: The reactive species generated by plasma lead to better film uniformity and fewer defects.
Enhanced Material Selection: PA-ALD expands the range of materials that can be deposited, including metals, oxides, and nitrides.
Faster Deposition Rates: Plasma can accelerate the chemical reactions, resulting in quicker deposition cycles.
Semiconductor Industry: Used for depositing gate oxides, high-k dielectrics, and metal interconnects in integrated circuits.
Energy Storage: Applied in the fabrication of thin-film batteries and supercapacitors.
Catalysis: Utilized for creating highly active and stable catalyst layers.
Medical Devices: Used for coating implants and biosensors to improve biocompatibility and functionality.
Equipment Complexity: The integration of plasma sources adds complexity and cost to the deposition system.
Process Control: Precise control of plasma parameters is essential to ensure consistent film quality.
Surface Damage: High-energy plasma species can potentially damage sensitive substrates.
Limited Precursor Availability: Suitable precursors for certain materials may be scarce or expensive.
