PA-ALD involves a cyclic process consisting of four main steps:
Precursor Exposure: A precursor gas is introduced into the reaction chamber, where it adsorbs onto the substrate surface. Purge: Excess precursor and by-products are purged from the chamber using an inert gas. Plasma Exposure: A plasma is generated, typically using gases like oxygen or nitrogen, to activate the surface and form a desired compound. Purge: Another purge step removes any remaining reactants and by-products.
This cycle is repeated until the desired film thickness is achieved, ensuring atomic-level control over the deposition process.
