EUV lithography employs a complex system of mirrors and lenses to focus the extreme ultraviolet light onto a photoresist-coated silicon wafer. The process involves several steps:
Light Generation: A high-power laser is used to produce plasma, which emits EUV light. Light Collection: This light is collected and directed through a series of multilayer mirrors to the wafer. Exposure: The EUV light is then projected through a mask that defines the desired pattern onto the photoresist. Development: The exposed photoresist is developed, leaving behind the desired nanostructures.
