Several factors contribute to static power dissipation:
Subthreshold leakage: Current that flows between the drain and source of a transistor when it is supposed to be off. Gate oxide leakage: Current that leaks through the thin gate dielectric of transistors. Junction leakage: Leakage that occurs at the PN junctions within the transistor. Gate-induced drain leakage (GIDL): Current that flows due to the high electric fields in the drain region of the transistor.
