Several strategies are employed to minimize gate leakage in nanotechnology applications:
High-k Dielectrics: Replacing conventional silicon dioxide with high-k dielectric materials can reduce leakage while maintaining high capacitance. Metal Gates: Using metal gates instead of polysilicon can reduce the gate leakage by providing better control over the threshold voltage. Managing Short Channel Effects: Advanced fabrication techniques and device architectures, such as FinFETs, can help mitigate short channel effects and reduce leakage.
