Several mechanisms contribute to gate leakage in nanotechnology:
Quantum Tunneling: Electrons can tunnel through the thin gate oxide due to its reduced thickness, a quantum mechanical effect that becomes significant at nanometer scales. Defects in Dielectric: Imperfections in the gate dielectric material can create pathways for leakage current. High Electric Fields: The electric field across the thin gate oxide can induce leakage current due to the increased potential difference.
