Hafnium oxide possesses several key properties that make it valuable in nanotechnology applications:
High Dielectric Constant: HfO2 has a dielectric constant of around 25, which is significantly higher than that of silicon dioxide (SiO2). Wide Bandgap: It has a wide bandgap of approximately 5.3 eV, providing excellent insulating properties. Thermal Stability: HfO2 is thermally stable up to high temperatures, making it suitable for use in high-temperature environments. Chemical Stability: It is chemically inert, which helps prevent reactions with other materials in device fabrication. Mechanical Properties: Hafnium oxide is hard and durable, which is beneficial for protective coatings and wear-resistant layers.
