Band gap engineering can be achieved through several methods:
Quantum Dots: These are semiconductor particles that are small enough to exhibit quantum mechanical properties. By changing the size of quantum dots, one can tune the band gap. Strain Engineering: Applying mechanical strain to a material can alter its electronic properties, including the band gap. Alloying: Mixing different semiconductors can result in a material with a band gap that is intermediate between the band gaps of the parent materials. Doping: Adding impurities to a semiconductor can modify its band structure and thereby its band gap.
