EUV Light Source: The process begins with the generation of EUV light, typically using a laser-produced plasma (LPP) source. Optical System: The EUV light is then directed through a series of mirrors that focus and shape the beam. Photomask: The shaped EUV light passes through a photomask, which contains the desired pattern to be etched onto the wafer. Photoresist: The light exposes a photoresist material on the wafer, altering its chemical properties in the exposed areas. Etching Process: Finally, the exposed areas of the photoresist are developed, and etching processes transfer the pattern onto the wafer substrate.
