Various techniques can be employed to mitigate subthreshold leakage in nanoscale devices:
High-k Dielectrics: Using materials with high dielectric constants can reduce leakage. Multi-Gate Transistors: Such as FinFETs, which offer better control over the channel. Optimized Doping: Carefully controlling the doping profile to balance performance and leakage. Adaptive Body Biasing: Dynamically adjusting the body bias to reduce leakage in different operating conditions.
