Several techniques are employed in channel engineering, including:
Strain Engineering: Applying mechanical strain to the channel to improve carrier mobility. High-κ Dielectrics: Using materials with high dielectric constants to reduce gate leakage and improve transistor performance. FinFET Technology: Utilizing a 3D structure to improve control over the channel and reduce leakage currents. Silicon-on-Insulator (SOI): Using an insulating layer to reduce parasitic capacitance and improve speed. Doping Techniques: Precisely controlling the type and concentration of dopants in the channel region.
