The subthreshold swing (SS) is a critical parameter in the performance of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), especially as devices scale down to the nanoscale. It represents the change in gate voltage required to increase the drain current by one order of magnitude (a factor of 10) in the subthreshold region. This region is where the MOSFET operates below the threshold voltage, which is crucial for low-power applications.
