A Gate-All-Around Field-Effect Transistor (GAAFET) is an advanced type of transistor that features a gate electrode wrapping around the channel region on all sides. This design offers superior electrostatic control over the channel compared to traditional FET architectures like planar FETs and FinFETs. The enhanced control results in improved device performance and scaling potential, making GAAFETs highly relevant in the field of Nanotechnology.
