Enhanced electrostatic control: The gate surrounds the channel completely, offering better control over the channel potential and reducing short-channel effects. Reduced leakage current: Improved gate control minimizes off-state leakage, enhancing power efficiency. Scalability: GAAFETs can be scaled to smaller dimensions more effectively than planar FETs and FinFETs, supporting the continuation of Moore's Law. Higher drive current: The superior electrostatic control allows for higher drive currents, improving the overall performance of the transistor.
