Gate Voltage: A higher negative gate voltage increases the electric field across the drain junction, thereby increasing GIDL. Drain Voltage: Higher drain voltage enhances the electric field, making GIDL more significant. Substrate Doping: The doping concentration of the substrate can affect the band-to-band tunneling rate. Channel Length: Shorter channel lengths result in higher electric fields, increasing GIDL. Temperature: Higher temperatures generally increase leakage currents, including GIDL.
