To mitigate GIDL in nanoscale devices, several strategies can be employed:
Gate Material: Using high-k gate dielectrics can help in reducing the electric fields across the drain junction. Drain Engineering: Techniques such as Lightly Doped Drain (LDD) structures can help in reducing the electric field at the drain junction. Channel Engineering: Strain engineering and the use of alternative channel materials can help in reducing GIDL. Optimized Biasing: Proper biasing techniques can help in minimizing the gate voltage and, consequently, the electric field. Temperature Control: Operating the devices at lower temperatures can reduce leakage currents.
