Several parameters need to be carefully controlled to optimize the RIE process: - Gas Composition: The choice of gases (e.g., SF6, CF4, O2) affects the etching rate and selectivity. - Pressure: Lower pressure generally leads to more anisotropic etching, while higher pressure can increase the etching rate. - RF Power: Higher power increases the ion energy, enhancing physical sputtering but potentially causing damage. - Etching Time: Determines the depth of the etch. Accurate timing is essential for achieving precise feature sizes.
