Gunn diodes are a type of semiconductor device that can generate microwave frequency signals. Named after J.B. Gunn, who discovered the effect in the early 1960s, these diodes are made from materials like Gallium Arsenide (GaAs) and Indium Phosphide (InP). Unlike conventional diodes, Gunn diodes do not have a p-n junction but instead rely on the Gunn effect, which occurs in certain materials when a strong electric field is applied.
