The outcome of the etching process is highly dependent on various process conditions, including:
Temperature: Higher temperatures generally increase the etch rate but can also affect selectivity and anisotropy. Pressure: Low pressure favors anisotropic etching while high pressure tends to be more isotropic. Gas Composition: In dry etching, the choice of gases (e.g., SF6, O2, CHF3) and their ratios can significantly impact the etch characteristics. Power: In plasma etching, the RF power controls the ion energy and density, affecting both the etch rate and anisotropy.
