The functioning of inorganic resists involves several steps, starting with the spin-coating of the resist material onto a substrate. This is followed by a bake step to remove solvents. The resist is then exposed to a pattern of radiation, such as electron beams or extreme ultraviolet (EUV) light. This exposure induces a chemical change in the resist material, making it either more soluble (positive resist) or less soluble (negative resist) in a developer solution. Finally, the patterned resist is developed, and the underlying substrate is etched or otherwise processed.
