Several techniques can be employed to mitigate the effects of DIBL: - Use of High-K Dielectrics: High-k materials increase gate control over the channel, reducing the influence of the drain voltage. - FinFETs and Multi-Gate Structures: These structures offer better control over the channel by surrounding it with gate material, thus reducing DIBL. - Scaling of Gate Oxide Thickness: Thinner gate oxides improve electrostatic control over the channel, reducing short-channel effects. - Optimized Channel Doping: Tailoring the doping profile near the source and drain can help manage the electric field distribution and reduce DIBL.
