Several techniques are used to measure and characterize interface traps: - Capacitance-Voltage (C-V) Measurements: This technique measures the capacitance of a MOS capacitor as a function of the applied voltage, providing information about the density and distribution of interface traps. - Charge Pumping: This method involves applying a pulsed voltage to the gate of a MOSFET and measuring the resulting current to determine the trap density. - Deep Level Transient Spectroscopy (DLTS): DLTS measures the transient response of traps to changes in temperature or voltage, providing detailed information about trap energy levels and capture/emission rates.
