The future of MRAM looks promising, with ongoing research and development aimed at overcoming current challenges and improving its performance. Emerging technologies such as spin-transfer torque (STT) and voltage-controlled magnetic anisotropy (VCMA) are showing potential in enhancing MRAM's efficiency and scalability. As nanotechnology continues to advance, we can expect MRAM to play a significant role in the next generation of memory technologies, potentially replacing traditional memory types in various applications.
