MRAM operates on the principle of magnetoresistance. The fundamental element of MRAM is the magnetic tunnel junction (MTJ), which consists of two ferromagnetic layers separated by an insulating layer. Data is stored based on the relative orientation of the magnetic moments in these layers. When the magnetic moments are parallel, the resistance is low, representing a binary '0'. Conversely, when they are antiparallel, the resistance is high, representing a binary '1'.
