The critical parameters for FETs in nanotechnology include:
Threshold Voltage (Vth): The minimum gate voltage required to create a conducting path between the source and drain. Transconductance (gm): The rate of change of the drain current with respect to the gate voltage. On/Off Current Ratio (Ion/Ioff): The ratio of the current when the FET is on to the current when it is off. Subthreshold Slope (SS): Indicates how effectively the FET can switch from off to on state.
