While interstitial doping offers numerous advantages, it also presents several challenges:
Control and Uniformity: Achieving uniform distribution and precise control over the concentration of dopants is difficult but essential for consistent properties. Stability: Interstitial dopants can migrate or cluster, which may degrade the material's performance over time. Lattice Distortion: High concentrations of interstitial dopants can distort the crystal lattice, affecting the material's properties negatively.
