Scaling down MOSFETs to the nanometer scale presents several challenges, including:
Short-Channel Effects: As the channel length decreases, undesirable effects such as drain-induced barrier lowering (DIBL) and punch-through can occur. Quantum Effects: At nanometer scales, quantum mechanical phenomena become significant, affecting the behavior of electrons. Heat Dissipation: Increased power density in smaller transistors can lead to overheating and reliability issues. Variability: Manufacturing variations at the nano-scale can lead to inconsistencies in transistor performance.
