Enhanced Electrostatic Control: The all-around gate structure provides superior control over the channel, minimizing leakage currents. Reduced Short-Channel Effects: The improved control over the channel also means fewer short-channel effects, making GAAFETs more reliable at smaller scales. Scalability: GAAFETs can be scaled down more effectively than traditional transistor designs, making them ideal for future generations of semiconductor technology. Energy Efficiency: The improved control and reduced leakage result in lower power consumption, which is crucial for battery-powered devices.
