Improved Performance: The GAA structure offers enhanced drive current capabilities, which translates to faster switching speeds and better overall performance. Reduced Leakage: With better electrostatic control, leakage currents are significantly minimized, leading to lower power consumption. Scalability: GAA transistors can be scaled down to very small dimensions, making them suitable for advanced semiconductor nodes. Thermal Management: The surrounding gate helps in better heat dissipation, which is crucial for maintaining device stability at nanoscale levels.
