Magnetic Tunnel Junctions (MTJs) are a type of nanoscale device used in spintronics, a field that exploits the intrinsic spin of electrons along with their charge. An MTJ consists of two ferromagnetic layers separated by a thin insulating barrier, typically made of magnesium oxide (MgO). The resistance of the junction changes depending on the relative orientation of the magnetization in the two ferromagnetic layers â parallel or antiparallel â making the device useful for applications such as magnetic memory and sensors.
