Several strategies are employed to mitigate the adverse effects of HCI in nanoscale devices:
Material Engineering: Using materials with higher breakdown strength and better thermal properties can help dissipate the energy of hot carriers more effectively. Device Design: Optimizing the device geometry and doping profiles can reduce the peak electric fields and the likelihood of hot carrier generation. Passivation: Passivating the oxide-semiconductor interface with high-quality materials can reduce the formation of trap states and defects.
