In thermal CVD, the substrate is heated to a high temperature, typically between 500°C and 1200°C. Gaseous precursors are introduced into the reaction chamber, where they undergo chemical reactions upon contacting the hot substrate. The key steps include:
Transport of reactant gases to the substrate surface. Adsorption of reactants onto the substrate. Surface reactions producing the desired film. Desorption of by-products from the surface.
