The process involves directing a focused ion beam (commonly Gallium ions) onto a resist-coated substrate. The ions interact with the resist, causing localized changes that define the pattern. IBL can be categorized into two primary methods: direct-write and mask-based. In the direct-write method, the ion beam scans the surface to create the desired pattern. In the mask-based method, a pre-patterned mask is used to shape the ion beam before it reaches the substrate.
