DLTS involves a series of steps where a semiconductor sample is first subjected to a reverse bias to deplete the charge carriers. A pulse of forward bias is then applied to fill the traps with charge carriers. After the pulse, the system returns to reverse bias, and the capacitance transient is measured as the carriers are thermally emitted from the traps. By analyzing the rate of capacitance change as a function of temperature, the activation energy and capture cross-section of the traps can be determined.
