Several techniques are employed to mitigate threshold voltage roll off:
1. Use of High-k Dielectrics: High-k materials can increase the gate capacitance without decreasing the oxide thickness, improving gate control over the channel. 2. Strain Engineering: Introducing strain in the silicon lattice can enhance carrier mobility and improve transistor performance. 3. Multi-Gate Transistors: Devices like FinFETs and Gate-All-Around (GAA) transistors offer better electrostatic control over the channel. 4. Channel Engineering: Techniques such as halo implantation and the use of silicon-on-insulator (SOI) substrates can help manage short-channel effects.
