Several strategies are employed to mitigate leakage currents in nanoscale devices: 1. High-k Dielectrics: Replacing traditional silicon dioxide with high-k materials like Hafnium dioxide can reduce leakage by providing a thicker barrier without compromising capacitance. 2. Strained Silicon: Enhancing the mobility of charge carriers can reduce the voltage required, thereby decreasing leakage. 3. Nanowire and Carbon nanotube transistors: These offer better control over electron flow, reducing leakage. 4. Metal Gate Technology: Replacing polysilicon gates with metal gates can reduce gate leakage.
