Substitutional Defects - Nanotechnology

What Are Substitutional Defects?

Substitutional defects occur when an atom in a crystal lattice is replaced by a different atom. These defects can significantly influence the properties of the material, such as electrical conductivity, mechanical strength, and chemical reactivity. In the context of Nanotechnology, substitutional defects can be engineered to tailor the properties of nanomaterials for specific applications.

How Are Substitutional Defects Introduced?

Substitutional defects can be introduced in various ways, including doping, ion implantation, and chemical vapor deposition (CVD). In doping, foreign atoms are intentionally introduced into the lattice to modify the material's properties. For example, doping silicon with phosphorus can create n-type semiconductors, crucial for electronics.

What Is the Role of Substitutional Defects in Nanotechnology?

In nanotechnology, substitutional defects are critical for tuning the electronic, mechanical, and optical properties of nanomaterials. For instance, introducing substitutional defects in graphene can alter its electrical conductivity and enhance its chemical reactivity, making it suitable for applications like sensors and catalysts.

What Are the Challenges Associated with Substitutional Defects?

One of the main challenges is the precise control over the location and concentration of substitutional defects. Uncontrolled introduction can lead to unwanted changes in material properties, adversely affecting device performance. Advanced techniques like atom probe tomography and scanning tunneling microscopy are used to study and control these defects at the nanoscale.

What Are Some Applications of Substitutional Defects?

Substitutional defects are pivotal in various applications, such as:

1. Semiconductors: Doping semiconductors with substitutional defects to create p-type and n-type materials for transistors.
2. Photocatalysts: Enhancing the activity of photocatalysts for solar energy conversion by introducing substitutional defects.
3. Magnetic Materials: Engineering the magnetic properties of materials for data storage devices.

Future Prospects

The future of substitutional defects in nanotechnology looks promising with the advent of more sophisticated techniques for defect engineering. Innovations in quantum computing and spintronics are expected to benefit significantly from controlled substitutional defects. These advancements could lead to more efficient devices and new functionalities in nanotechnology.

Relevant Publications

Solution-processed SbSe photocathodes under Se-rich conditions and their photoelectrochemical properties.

Issue Release: 2024

Rapid Characterization of Point Defects in Solid-State Ion Conductors Using Raman Spectroscopy, Machine-Learning Force Fields, and Atomic Raman Tensors.

Issue Release: 2024

Charge state-dependent symmetry breaking of atomic defects in transition metal dichalcogenides.

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The synergistic effect of Cd-doped and S-vacancies in CdZnInS 2D nanosheets for high-performance triethylamine sensing.

Issue Release: 2024

Identification and Manipulation of Atomic Defects in Monolayer SnSe.

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A Recipe for a Great Meal: A Benchtop Route from Elemental Se to Superior Thermoelectric β-AgSe.

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Synergistic Effects of Carbon Vacancies in Conjunction with Phosphorus Dopant across Bilayer Graphene for the Enhanced Hydrogen Evolution Reaction.

Issue Release: 2024

Fast optoelectronic charge state conversion of silicon vacancies in diamond.

Issue Release: 2024

Crucial Role of Ni Point Defects and Sb Doping for Tailoring the Thermoelectric Properties of ZrNiSn Half-Heusler Alloy: An Ab Initio Study.

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Nitrogen-Doped Graphene Materials with High Electrical Conductivity Produced by Electrochemical Exfoliation of Graphite Foil.

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Effects of Vacancy Defects and Atomic Doping on the Electronic and Magnetic Properties of Puckered Penta-like PdPSe Monolayer: An Ab initio Study.

Issue Release: 2024

Chalcogen Doping in SnO: A DFT Investigation of Optical and Electronic Properties for Enhanced Photocatalytic Applications.

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Size-Dependent Isovalent Impurity Doping for Ambipolar Control in CuN.

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Unraveling the Photoluminescence Properties of a Boron Nitride Nanosheet Dispersed in Different Solvents and Its Application to Generate White Light.

Issue Release: 2023

Mechanisms of point defect formation and ionic conduction in divalent cation-doped lanthanum oxybromide: first-principles and experimental study.

Issue Release: 2023

Gas Sensing and Half-Metallic Materials Design Using Metal Embedded into S Vacancies in WS Monolayers: Adsorption of NO, CO, and O Molecules.

Issue Release: 2023

Shapes of phases in isothermal phase diagrams: what is wrong with the Thermo-Calc logo.

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Inﬂuences of Point Defects on Electron Transport of Two-Dimensional GeP Semiconductor Device.

Issue Release: 2023

Supercritical CO Synthesis of Porous Metalloporphyrin Frameworks: Application in Photodynamic Therapy.

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The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film.

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