As electronic devices continue to shrink in size, the traditional silicon dioxide (SiO2) used as a dielectric material faces limitations due to its low dielectric constant. High k dielectrics, such as Hafnium oxide (HfO2) and Zirconium oxide (ZrO2), provide better insulation properties. This allows for a reduction in gate leakage current and helps in maintaining the device's performance even at nanoscale dimensions.
