Nanotechnology significantly enhances the performance of HEMTs by enabling the precise design and fabrication of nanoscale structures. This includes the creation of ultra-thin layers and the precise doping of semiconductor materials, which are crucial for optimizing the electron mobility and minimizing defects. Advances in nanofabrication techniques, such as atomic layer deposition and electron beam lithography, allow for the precise control of the material properties at the nanoscale.
