What Materials are Used for Nanowire Photodetectors?
Several materials are employed in the fabrication of nanowire photodetectors, each offering distinct advantages. Commonly used materials include:
Silicon: Widely used due to its compatibility with existing semiconductor technologies. Gallium Arsenide (GaAs): Offers high electron mobility and is suitable for high-speed applications. Indium Phosphide (InP): Excellent for infrared detection due to its direct bandgap properties. Zinc Oxide (ZnO): Known for its wide bandgap and high exciton binding energy.
