The future of nanoscale MOSFETs looks promising, with ongoing research aimed at overcoming current limitations and exploring new possibilities. Innovations in 3D transistors, such as FinFETs and Gate-All-Around (GAA) FETs, are expected to push performance boundaries further. Additionally, the integration of artificial intelligence (AI) and machine learning algorithms can optimize the design and fabrication processes, leading to more efficient and powerful nanoscale devices.
