The subthreshold slope (SS) is a critical parameter in the performance of field-effect transistors (FETs), especially when dealing with nanotechnology and nanoelectronics. SS refers to the rate at which the drain current (ID) increases with the gate voltage (VG) in the subthreshold region of a transistor. It is typically measured in millivolts per decade (mV/dec), indicating the amount of gate voltage required to increase the drain current by one order of magnitude.