As nodes shrink, they encounter several technical challenges:
Quantum effects: At scales below 10nm, quantum mechanical phenomena like tunneling become significant, leading to increased leakage currents. Material limitations: Traditional silicon-based materials may not perform effectively at these scales, necessitating the use of advanced materials like high-k dielectrics and metal gates. Manufacturing complexity: Advanced lithography techniques such as extreme ultraviolet (EUV) lithography are required to achieve these small features, increasing the cost and complexity of manufacturing.
