1. Improved Electrostatic Control: The gate-all-around structure provides superior control over the channel, leading to reduced off-state current and better subthreshold slope. 2. Reduced Short-Channel Effects: The enhanced gate control minimizes short-channel effects, which are prevalent in traditional planar and FinFET devices. 3. Scalability: GAA FETs are better suited for continued scaling down of transistor sizes, essential for the future of Moore's Law. 4. Performance: Enhanced control leads to higher drive currents and faster switching speeds, improving overall device performance.
