Several strategies have been proposed to mitigate the effects of reduced drive current in nanotechnology:
1. High-k Dielectrics: Using high-k dielectric materials can help reduce gate leakage currents, thereby improving drive current. 2. Strain Engineering: Applying mechanical strain to semiconductor materials can enhance carrier mobility, which in turn increases drive current. 3. Multi-gate Transistors: Devices like FinFETs offer better control over the channel, reducing leakage and improving drive current. 4. Material Innovation: As mentioned earlier, exploring new materials with superior electrical properties can offer a long-term solution.
