Biasing in nanoscale devices can be applied in several ways, including:
Gate Biasing: In field-effect transistors (FETs), a voltage is applied to the gate terminal to control the flow of current between the source and drain terminals. Source-Drain Biasing: A voltage is applied between the source and drain terminals to drive the current through the channel of the device. Back-Gate Biasing: Used in some advanced nanodevices, a voltage is applied to a back-gate to modulate the channel properties from the substrate side.
